cystech electronics corp. spec. no. : c824l3 issued date : 2007.03.29 revised date : 2010.09.06 page no. : 1/7 BTB5213L3 cystek product specification general purpose pnp epitaxial planar transistor BTB5213L3 description general purpose mainly intended for use in medium pow er industrial application and for audio amplifier output stage. features ? high collector current and low v ce(sat) . ? complement to btd5213l3. ? pb-free lead plating package. symbol outline BTB5213L3 sot-223 b base c collector e emitter b c e absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current(dc) i c -1 a collector current(pulse) i cp -1.5 a power dissipation @t c =25 pd 2 w junction temperature tj 150 c storage temperature tstg -55~+150 c
cystech electronics corp. spec. no. : c824l3 issued date : 2007.03.29 revised date : 2010.09.06 page no. : 2/7 BTB5213L3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -100 - - v i c =-100 a bv ceo -80 - - v i c =-10ma bv ebo -5 - - v i e =-10 a i cbo - - -100 na v cb =-80v i ebo - - -100 na v eb =-5v *v ce(sat) 1 - -0.16 -0.3 v i c =-500ma, i b =-50ma *v ce(sat) 2 - - -0.6 v i c =-700ma, i b =-35ma *v be(sat) - - -1.2 v i c =-1a, i b =-50ma *v be(on) - - -1.0 v v ce =-2v, i c =-500ma *h fe 1 100 - - - v ce =-2v, i c =-5ma *h fe 2 100 - 400 - v ce =-2v, i c =-150ma *h fe 3 50 - - - v ce =-2v, i c =-500ma f t - 125 - mhz v ce =-10v, i c =-50ma, f=100mhz cob - - 10 pf v cb =-10v, i e =0a,f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping marking BTB5213L3 sot-223 (pb-free lead plating package) 2500 pcs / tape & reel ak
cystech electronics corp. spec. no. : c824l3 issued date : 2007.03.29 revised date : 2010.09.06 page no. : 3/7 BTB5213L3 cystek product specification typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(v) ic=10ib vcesat ic=20ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon@vce=2v typical cutoff current characteristics 10 100 1000 02040608010 0 transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz) collector base voltage-- vcb(v) c-b cutoff current---icbo(na) tj=150c
cystech electronics corp. spec. no. : c824l3 issued date : 2007.03.29 revised date : 2010.09.06 page no. : 4/7 BTB5213L3 cystek product specification typical characteristics(cont.) power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c824l3 issued date : 2007.03.29 revised date : 2010.09.06 page no. : 5/7 BTB5213L3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c824l3 issued date : 2007.03.29 revised date : 2010.09.06 page no. : 6/7 BTB5213L3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c824l3 issued date : 2007.03.29 revised date : 2010.09.06 page no. : 7/7 BTB5213L3 cystek product specification sot-223 dimension *: typical 321 f b a c d e g h a1 a2 i style: pin 1.base 2.collector 3.emitter marking: 3-lead sot-223 plastic surface mounted package cystek package code: l3 ak device code date code inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1142 0.1220 2.90 3.10 g 0.0551 0.0709 1.40 1.80 b 0.2638 0.2874 6.70 7.30 h 0.0098 0.0138 0.25 0.35 c 0.1299 0.1457 3.30 3.70 i 0.0008 0.0039 0.02 0.10 d 0.0236 0.0315 0.60 0.80 a1 *13 o - *13 o - e *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o f 0.2480 0.2638 6.30 6.70 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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